IKZ Accelerates Efforts for Energy Efficiency with Advanced Power Conversion Technology
Further development of gallium oxide technology promotes optimisation in high-power and high-voltage applications
Gallium oxide substrates © IKZ / Volkmar Otto
Semi-insulating β-Ga₂O₃ single crystal with a diameter of 2 inches © IKZ
The need for advanced power conversion systems increases as the EU ambitiously pursues net zero emissions. To achieve this, it is necessary to optimize the energy transfer from the grid to daily use and to minimize energy losses. An outstanding candidate in the pursuit of more efficient power conversion systems is β-gallium oxide (β-Ga2O3). Despite its comparatively lower thermal conductivity, gallium oxide exhibits an impressive wide bandgap (~4.8 eV), high breakdown field (8 MV/cm), and potentially lower production costs than SiC and GaN. These attributes position gallium oxide as a promising candidate for high-power and high-voltage applications, that could revolutionize electric mobility, renewable energy systems, and power grids.
Researchers at the Leibniz-Institut für Kristallzüchtung (IKZ) have dedicated the past decade to advancing gallium oxide technology. Utilizing the Czochralski method for bulk crystal growth and Metalorganic Vapor Phase Epitaxy (MOVPE) for thin oxide layers, IKZ has made significant progress in growing high-quality β-Ga2O3 crystals up to 2 inches and developing epitaxial growth of gallium oxide films that meet the demanding requirements for power electronics. A good overview can be found in the recently published Flyer.
Going beyond the basic research level, IKZ is dedicated to promoting gallium oxide technology for the next-generation power electronics complementary to SiC and GaN. With 15 years of experience and a diverse patent portfolio, IKZ offers high-quality Czochralski-grown (100) β-Ga2O3 substrates (commercially available via the partner company CrysTec GmbH) and MOVPE-grown β-Ga2O3 epilayers. Further details, as well as the specifications of the crystals and epilayers of IKZ, can be found here: www.ikz-berlin.de/en/offer/gallium-oxide.
As a key player in the gallium oxide community, IKZ is honored to co-chair the International Workshop on Gallium Oxide and Related Materials (IWGO, grafox2022.pdi-berlin.de/iwgo-2024/) with Paul Drude Institute for Solid State Electronics (PDI), which takes place in Berlin from May 26 – 31, 2024. The workshop brings together scientists and engineers from around the world working on all aspects of materials and device technology, reflecting the growing interest in β-Ga2O3 from both industry and academia.
Contact:
Dr. Andreas Popp
Leibniz-Institut für Kristallzüchtung im Forschungsverbund Berlin e.V. (IKZ)
Section: Thin Oxide Films
Epitaxy of semiconducting Gallium Oxide
+49 30 6392-2844
andreas.popp(at)ikz-berlin.de
Press release IKZ, 7 March 2024